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| CM200TU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMODTM 200 Amperes/600 Volts J S - NUTS (5 TYP) CM N P K K R T (4 TYP.) P GUP EUP GVP EVP GWP EWP L BE N L N L M Q TC MEASURING POINT TC MEASURING POINT GUN EUN GVN EVN GWN EWN U V W J L N D A W - THICK x X - WIDE TAB (12 PLACES) J L N V W - THICK x X - WIDE TAB (12 PLACES) H L C F G P GUP RTC EUP U GUN RTC EUN N EVN GVN RTC EWN EVP V GWN RTC GVP RTC EWP W A GWP RTC Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control UPS Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200TU-12F is a 600V (VCES), 200 Ampere SixIGBT IGBTMODTM Power Module. Type CM Current Rating Amperes 200 VCES Volts (x 50) 12 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L Inches 4.21 4.02 Millimeters 107.0 102.0 Dimensions M N P Q R S T V W X Inches 0.57 0.85 0.67 1.91 0.15 M5 0.22 Dia. 0.03 0.02 0.110 Millimeters 14.4 21.7 17.0 48.5 3.75 M5 5.5 Dia. 0.8 0.5 2.79 1.14 +0.04/-0.02 29.0 +1.0/-0.5 3.540.01 3.150.01 0.16 1.02 0.31 0.91 0.47 0.43 90.00.25 80.00.25 4.0 26.0 8.1 23.0 12.0 11.0 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200TU-12F Trench Gate Design Six IGBTMODTM 200 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** Peak Emitter Current** Maximum Collector Dissipation (Tj < 150C) Mounting Torque, M5 Main Terminal Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM200TU-12F -40 to 150 -40 to 125 600 20 200 400* 200 400* 590 31 31 680 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VCES, VCE = 0V IC = 20mA, VCE = 10V IC = 200A, VGE = 15V, Tj = 25C IC = 200A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage** VCC = 300V, IC = 200A, VGE = 15V IE = 200A, VGE = 0V Min. - - 5 - - - - Typ. - - 6 1.6 1.6 1240 - Max. 1 20 7 2.2 - - 2.6 Units mA A Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200TU-12F Trench Gate Design Six IGBTMODTM 200 Amperes/600 Volts Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 200A, VGE1 = VGE2 = 15V, RG = 3.1 , Inductive Load Switching Operation IE = 200A VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 3.8 Max. 54 3.6 2 120 100 350 250 150 - Units nf nf nf ns ns ns ns ns C Diode Reverse Recovery Time** Diode Reverse Recovery Charge** Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)'Q Rth(c-f) Test Conditions Per IGBT 1/6 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per FWDi 1/6 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per IGBT 1/6 Module, Tc Reference Point Under Chip Contact Thermal Resistance Per Module, Thermal Grease Applied - 0.015 - C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Min. - Typ. Max. 0.21 Units C/W C/W C/W - - 0.35 - 0.13 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200TU-12F Trench Gate Design Six IGBTMODTM 200 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 400 COLLECTOR CURRENT, IC, (AMPERES) 15 9.5 320 240 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 11 10 2.5 VGE = 15V Tj = 25C Tj = 125C 5 Tj = 25C VGE = 20V 9 2.0 1.5 1.0 0.5 4 3 IC = 400A 160 80 8 7.5 8.5 2 1 IC = 200A IC = 80A 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 80 160 240 320 400 COLLECTOR-CURRENT, IC, (AMPERES) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 102 Cies 103 td(off) tf 102 101 SWITCHING TIME, (ns) 102 td(on) tr Coes 101 100 101 Cres VGE = 0V VCC = 300V VGE = 15V RG = 3.1 Tj = 125C Inductive Load 100 0 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 102 REVERSE RECOVERY TIME, trr, (ns) 102 Irr trr 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 10-3 10-2 10-1 100 101 IC = 200A 16 12 8 4 VCC = 200V VCC = 300V 100 Per Unit Base Rth(j-c) = 0.21C/W (IGBT) Rth(j-c) = 0.35C/W (FWDi) Single Pulse TC = 25C 101 VCC = 300V VGE = 15V RG = 3.1 Tj = 25C Inductive Load 101 10-1 10-1 10-2 10-2 100 101 102 EMITTER CURRENT, IE, (AMPERES) 100 103 0 0 10-3 10-5 TIME, (s) 600 1200 1800 10-4 10-3 10-3 GATE CHARGE, QG, (nC) 4 |
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